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? semiconductor components industries, llc, 2016 october, 2016 ? rev. 10 1 publication order number: ncs333/d ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 10 v offset, 0.07 v/ c, low power, zero-drift operational amplifier the ncs333 family of high precision op amps feature very low input offset voltage and near?zero drift over time and temperature. these low quiescent current amplifiers have high impedance inputs with a common?mode range 100 mv beyond the rails as well as rail?to?rail output swing within 50 mv of the rails. these op amps operate over a wide supply range from 1.8 v to 5.5 v. the ncs333 family exhibits outstanding cmrr without the crossover associated with traditional complementary input stages. the ncs333, as well as the dual version, ncs2333, and the quad version, ncs4333, come in a variety of packages and pinouts. automotive qualified options are available under ncv prefix. features ? low offset voltage: 10 v max for ncs333, 30 v max for ncs2333 and ncs4333 ? zero drift: 0.07 v/ c max ? low noise: 1.1 vpp, 0.1 hz to 10 hz ? quiescent current per channel: 17 a typical at 3.3 v supply ? supply voltage: 1.8 v to 5.5 v ? rail?to?rail input and output ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? temperature measurements ? transducer applications ? current sensing end products ? battery powered instruments ? electronic scales ? medical instrumentation this document contains information on some products that are still under development. on semiconductor reserves the right to change or discontinue these products without notice. sot23?5 sn suffix case 483 www. onsemi.com 1 5 sc70?5 sq suffix case 419a 1 5 dfn?8 mn suffix case 506bw msop?8 dm suffix case 846a?02 soic?8 d suffix case 751 soic?14 d suffix case 751a see detailed ordering and shipping information on page 3 o f this data sheet. ordering information see general marking information in the device marking section on page 2 of this data sheet. device marking information 1 14 1 8 1
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 2 device marking information soic?14 case 751a quad channel configuration ncs4333, ncv4333 ncs4333g awlyww 1 14 33e = specific device code (sot23?5) 33h = specific device code (sc70?5) a = assembly location y = year w = work week m = date code g or = pb?free package dfn8, 3x3, 0.65p case 506bw micro8/msop8 case 846a?02 soic?8 case 751 n2333 alyw 1 8 ncs 2333 alyw 1 dual channel configuration ncs2333, ncv2333 tsop?5/sot23?5 case 483 sc70?5 case 419a single channel configuration ncs333, ncv333 33hm 33eayw (note: microdot may be in either location) 2333 ayw 1 8
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 3 pin connections single channel configuration ncs333, ncv333 1 2 34 5 out vss in+ in? vdd 1 2 34 5 in+ vss in? out vdd sot23?5 / tsop?5 sc70?5 / sc?88?5 / sot?353?5 dual channel configuration ncs2333, ncv2333 quad channel configuration ncs4333, ncv4333 1 4 3 2 14 11 12 13 out 1 in? 1 in+ 1 vdd out 4 in? 4 in+ 4 vss 7 6 5 8 9 10 in+ 2 in? 2 out 2 in+ 3 in? 3 out 3 + ? + ? ? + + ? ordering information configuration automotive device package shipping ? single no ncs333sn2t1g sot23?5 / tsop?5 3000 / tape & reel ncs333asn2t1g* (in development) 3000 / tape & reel ncs333sq3t2g sc70?5 / sc?88?5 / sot?353?5 3000 / tape & reel ncs333asq3t2g* (in development) 3000 / tape & reel yes ncv333sn2t1g* (in development) sot23?5 / tsop?5 3000 / tape & reel dual no ncs2333mntxg* (in development) dfn8 3000 / tape & reel ncs2333dr2g soic?8 2500 / tape & reel ncs2333dmr2g micro?8 4000 / tape & reel yes ncv2333dr2g soic?8 2500 / tape & reel ncv2333dmr2g* (in development) micro?8 4000 / tape & reel quad no ncs4333dr2g soic?14 2500 / tape & reel yes NCV4333DR2G soic?14 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *contact local sales office for more information
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 4 absolute maximum ratings over operating free?air temperature, unless otherwise stated. parameter rating unit supply voltage 7 v input and output pins input voltage (note 1) (vss) ? 0.3 to (vdd) + 0.3 v input current (note 1) 10 ma output short circuit current (note 2) continuous temperature operating temperature range ?40 to +125 c storage temperature range ?65 to +150 c junction temperature +150 c esd ratings (note 3) human body model (hbm) 4000 v machine model (mm) 200 v charged device model (cdm) 2000 v other ratings latch?up current (note 4) 100 ma msl level 1 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. input terminals are diode?clamped to the power?supply rails. in put signals that can swing more than 0.3 v beyond the supply r ails should be current limited to 10 ma or less 2. short?circuit to ground. 3. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec?q100?002 (jedec standard: jesd22?a114) esd machine model tested per aec?q100?003 (jedec standard: jesd22?a115) 4. latch?up current tested per jedec standard: jesd78. thermal information (note 5) parameter symbol package value unit thermal resistance, junction to ambient ja sot23?5 / tsop5 290 c/w sc70?5 / sc?88?5 / sot?353?5 425 micro8 / msop8 298 soic?8 250 dfn?8 130 soic?14 216 5. as mounted on an 80x80x1.5 mm fr4 pcb with 650 mm 2 and 2 oz (0.034 mm) thick copper heat spreader. following jedec jesd/eia 51.1, 51.2, 51.3 test guidelines recommended operating conditions parameter symbol range unit supply voltage (v dd ? v ss ) v s 1.8 to 5.5 v specified operating range ncs333 t a ?40 to 105 c ncs333a, ncv333, ncx2333, ncx4333 ?40 to 125 input common mode voltage range v icmr v ss ?0.1 to v dd +0.1 v functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 5 electrical characteristics: v s = 1.8 v to 5.5 v at t a = +25 c, r l = 10 k connected to midsupply, v cm = v out = midsupply, unless otherwise noted. boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. parameter symbol conditions min typ max unit input characteristics offset voltage v os v s = +5 v ncs333 3.5 10 v ncx2333, ncx4333 6.0 30 offset voltage drift vs temp v os / t ncs333 0.03 0.07 v/ c ncx2333, v s = 5 v 0.04 0.07 ncx4333, v s = 5 v 0.095 0.14 offset voltage drift vs supply v os / v s ncs333 full temperature range 0.32 5 v/v ncx2333, ncx4333 t a = +25 c 0.32 5 full temperature range 12.6 input bias current i ib t a = +25 c ncs333 60 200 pa ncx2333, ncx4333 60 400 full temperature range 400 input offset current i os t a = +25 c ncs333 50 400 pa ncx2333, ncx4333 50 800 common mode rejection ratio cmrr v ss ? 0.1 < v cm < v dd + 0.1 v s = 1.8 v 111 db v s = 3.3 v 118 v s = 5.0 v 106 123 v s = 5.5 v 127 input resistance r in differential 180 g common mode 90 input capacitance c in ncs333 differential 2.3 pf common mode 4.6 ncx2333, ncx4333 differential 4.1 common mode 7.9 output characteristics open loop voltage gain a vol v ss + 100 mv < v o < v dd ? 100 mv 106 145 db open loop output impedance z out?ol f = ugbw, i o = 0 ma 300 output voltage high, referenced to v dd v oh t a = +25 c 10 50 mv full temperature range 70 output voltage low, referenced to v ss v ol t a = +25 c 10 50 mv full temperature range 70 output current capability i o sinking current ncs333 25 ma ncx2333, ncx4333 11 sourcing current 5.0 capacitive load drive c l see figure 13
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 6 electrical characteristics: v s = 1.8 v to 5.5 v at t a = +25 c, r l = 10 k connected to midsupply, v cm = v out = midsupply, unless otherwise noted. boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. parameter unit max typ min conditions symbol noise performance voltage noise density e n f in = 1 khz 62 nv / hz voltage noise e p?p f in = 0.1 hz to 10 hz 1.1 v pp f in = 0.01 hz to 1 hz 0.5 current noise density i n f in = 10 hz 350 fa / hz channel separation ncx2333, ncx4333 135 db dynamic performance gain bandwidth product gbwp c l = 100 pf ncs333, ncx4333 350 khz ncx2333 270 gain margin a m c l = 100 pf 18 db phase margin m c l = 100 pf 55 slew rate sr g = +1 0.15 v/ s power supply power supply rejection ratio psrr ncs333 full temperature range 106 130 db ncx2333, ncx4333, ncv333 t a = +25 c 106 130 full temperature range 98 turn?on time t on v s = 5 v 100 s quiescent current i q no load, per channel 1.8 v v s 3.3 v 17 25 a 27 3.3 v < v s 5.5 v 21 33 35 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 7 typical characteristics figure 1. open loop gain and phase margin vs. frequency figure 2. cmrr vs. frequency frequency (hz) frequency (hz) ?20 0 20 60 80 120 1m 100k 10k 1k 100 10 0 10 30 50 70 80 100 120 figure 3. psrr vs. frequency figure 4. output voltage swing vs. output current frequency (hz) output current (ma) 100k 10k 1k 100 10 0 20 40 60 80 100 120 9 7 6 5 4 2 1 0 ?3 ?2 ?1 0 1 2 3 gain (db) cmrr (db) psrr (db) output swing (v) 20 40 60 90 110 t = 25 c t = 25 c +psrr ?psrr 3810 t = 25 c v s = 5.5 v, v oh v s = 1.8 v, v oh v s = 1.8 v, v ol v s = 5.5 v, v ol ?40 40 100 gain phase margin 1m 100k 10k 1k 100 10 c l = 100 pf r l = 10 k t = 25 c 1m 15 30 45 75 90 120 0 60 105 phase margin ( )
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 8 typical characteristics figure 5. input bias current vs. common mode voltage figure 6. input bias current vs. temperature common mode voltage (v) temperature ( c) 1.8 1.4 1.2 0.8 0.4 0.2 ?0.2 ?200 ?150 ?100 ?50 0 50 150 200 100 80 60 40 20 0 ?20 ?40 ?200 ?150 ?100 ?50 50 100 150 200 figure 7. quiescent current vs. temperature figure 8. large signal step response temperature ( c) time ( s) 100 80 60 40 20 0 ?20 ?40 0 5 10 15 20 25 30 400 300 200 100 0 ?100 ?4 ?3 ?2 ?1 0 2 3 4 figure 9. small signal step response figure 10. positive overvoltage recovery time ( s) time (50 s/div) 30 20 10 0 ?10 ?0.15 ?0.10 ?0.05 0 0.05 0.10 0.15 0.20 ?3.0 ?2.5 ?2.0 ?1.5 ?1.0 ?0.5 0.5 1.0 input bias current (pa) input bias current (pa) i q ( a) input (v) input and output (v) input (v) v s = 1.8 v v s = 3.3 v v s = 5.0 v v s = 5.5 v 1 input output v s = 5.0 v a v = +1 r l = 10 k ?3 ?2 ?1 0 2 3 4 1 5 output (v) input output v s = 5.0 v a v = ?1 r l = 10 k 0 v s = 5.0 v a v = ?10 r l = 10 k input output ?1.0 ?0.5 0 0.5 1.5 2.0 2.5 1.0 3.0 output (v) 0 0.6 1.0 1.6 2.0 100 t = 25 c v s = 1.8 v i ib+ i ib? t = 25 c v s = 5 v i ib+ i ib? 0 per channel
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 9 typical characteristics figure 11. negative overvoltage recovery figure 12. setting time to 0.1% vs. closed?loop gain time (50 s/div) gain (v/v) ?1.0 ?0.5 0 0.5 1.0 2.0 2.5 3.0 100 10 1 0 100 200 300 400 500 figure 13. small?signal overshoot vs. load capacitance figure 14. 0.1 hz to 10 hz noise load capacitance (pf) time (s) 1000 100 10 0 10 20 30 40 50 60 8 7 6 5 4 2 1 0 ?1000 ?750 ?500 ?250 0 500 750 1000 figure 15. voltage noise density vs. frequency figure 16. current noise density vs. frequency frequency (hz) frequency (hz) 10,000 1000 100 10 1 10 100 1000 10,000 1000 100 10 1 10 100 1000 input (v) settling time ( s) overshoot (%) voltage (nv) voltage noise (nv/ hz) current noise (fa/ hz) v s = 5.0 v a v = ?10 r l = 10 k input output t = 25 c 5 15 25 35 45 55 65 3910 250 v cm = v s /2 r l = 10 k t = 25 c t = 25 c t = 25 c 1.5 ?3.0 ?2.5 ?2.0 ?1.5 ?0.5 0 0.5 ?1.0 1.0 output (v) t = 25 c r l = 10 k
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 10 applications information application circuits low?side current sensing the goal of low?side current sensing is to detect over?current conditions or as a method of feedback control. a sense resistor is placed in series with the load to ground. typically, the value of the sense resistor is less than 100 m to reduce power loss across the resistor. the op amp amplifies the voltage drop across the sense resistor with a gain set by external resistors r1, r2, r3, and r4 (where r1 = r2, r3 = r4). precision resistors are required for high accuracy, and the gain is set to utilize the full scale of the adc for the highest resolution. + ? load vdd adc microcontroller control r sense r 1 r 2 r 3 r 4 vdd vdd v load figure 17. low?side current sensing differential amplifier for bridged circuits sensors to measure strain, pressure, and temperature are often configured in a wheatstone bridge circuit as shown in figure 18. in the measurement, the voltage change that is produced is relatively small and needs to be amplified before going into an adc. precision amplifiers are recommended in these types of applications due to their high gain, low noise, and low offset voltage. figure 18. bridge circuit amplification + ? vdd vdd emi susceptibility and input filtering op amps have varying amounts of emi susceptibility. semiconductor junctions can pick up and rectify emi signals, creating an emi?induced voltage offset at the output, adding another component to the total error. input pins are the most sensitive to emi. the ncs333 op amp family integrates low?pass filters to decrease sensitivity to emi. general layout guidelines to ensure optimum device performance, it is important to follow good pcb design practices. place 0.1 f decoupling capacitors as close as possible to the supply pins. keep traces short, utilize a ground plane, choose surface?mount components, and place components as close as possible to the device pins. these techniques will reduce susceptibility to electromagnetic interference (emi). thermoelectric effects can create an additional temperature dependent offset voltage at the input pins. to reduce these effects, use metals with low thermoelectric?coefficients and prevent temperature gradients from heat sources or cooling fans.
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 11 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc?88a (sc?70?5/sot?353) case 419a?02 issue l mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 solder footprint *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 12 package dimensions tsop?5 case 483?02 issue k notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a 3.00 bsc b 1.50 bsc c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 13 package dimensions dfn8, 3x3, 0.65p case 506bw issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 e2 bottom view b e 8x 0.10 b 0.05 a c c k 8x note 3 2x 0.10 c pin one reference top view 2x 0.10 c a a1 (a3) 0.05 c 0.05 c c seating plane side view l 8x 14 5 8 dim min max millimeters a 0.80 1.00 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 3.00 bsc d2 2.30 2.50 e 3.00 bsc e2 1.55 1.75 e 0.65 bsc k 0.20 ??? l 0.35 0.45 ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? 1 0.65 pitch 3.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. recommended 8x dimensions: millimeters l1 detail a l optional constructions l 0.00 0.15 note 4 e/2 soldering footprint*
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 14 package dimensions micro8 case 846a?02 issue j s b m 0.08 (0.003) a s t notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. 846a-01 obsolete, new standard 846a-02. b e pin 1 id 8 pl 0.038 (0.0015) ?t? seating plane a a1 c l *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters ?? ?? 1.10 ?? inches a1 0.05 0.08 0.15 0.002 b 0.25 0.33 0.40 0.010 c 0.13 0.18 0.23 0.005 d 2.90 3.00 3.10 0.114 e 2.90 3.00 3.10 0.114 e 0.65 bsc l 0.40 0.55 0.70 0.016 ?? 0.043 0.003 0.006 0.013 0.016 0.007 0.009 0.118 0.122 0.118 0.122 0.026 bsc 0.021 0.028 nom max 4.75 4.90 5.05 0.187 0.193 0.199 h e h e d d e 8x 0.48 0.65 pitch 5.25 8x 0.80 dimension: millimeters recommended
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 15 package dimensions soic?8 nb case 751?07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
ncs333, ncv333, ncs2333, ncv2333, ncs4333, ncv4333 www. onsemi.com 16 package dimensions soic?14 nb case 751a?03 issue k notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b does not include dambar protrusion. allowable protrusion shall be 0.13 total in excess of at maximum material condition. 4. dimensions d and e do not include mold protrusions. 5. maximum mold protrusion 0.15 per side. h 14 8 7 1 m 0.25 b m c h x 45 seating plane a1 a m s a m 0.25 b s c b 13x b a e d e detail a l a3 detail a dim min max min max inches millimeters d 8.55 8.75 0.337 0.344 e 3.80 4.00 0.150 0.157 a 1.35 1.75 0.054 0.068 b 0.35 0.49 0.014 0.019 l 0.40 1.25 0.016 0.049 e 1.27 bsc 0.050 bsc a3 0.19 0.25 0.008 0.010 a1 0.10 0.25 0.004 0.010 m 0 7 0 7 h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.019 6.50 14x 0.58 14x 1.18 1.27 dimensions: millimeters 1 pitch soldering footprint* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncs333/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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